Halogen-containing polymers have be

Halogen-containing polymers have been used in lithography for a long time, for example, fluorine-containing polymers have been used in photoresists. With the use of shorter exposure light wavelengths for photolithography, aromatic structures cannot be used as a plasma etch mask in a photoresist due to their strong absorbance. Fluorine-containing polymers have been developed because of their etch resistance and transparence. The etch properties of halogenated polymers are not exactly like the polymers that contain only C, H, and O. In his 1983 paper [3], Ohnishi found halogencontaining polymers were not following the trend in certain etch gases. From the literature, we can see that people had modified the Ohnishi parameter to fit their etch rates of fluorine-containing polymers in different ways. However, the modifications are more mathematical, and there is no theory that can explain the physical meaning. Here, we selectedthree published papers and analyzed their data and conclusions based on our polymer decomposition theory.

結果 (繁體中文) 1:

Halogen-containing polymers have been used in lithography for a long time, for example, fluorine-containing polymers have been used in photoresists. With the use of shorter exposure light wavelengths for photolithography, aromatic structures cannot be used as a plasma etch mask in a photoresist due to their strong absorbance. Fluorine-containing polymers have been developed because of their etch resistance and transparence. The etch properties of halogenated polymers are not exactly like the polymers that contain only C, H, and O. In his 1983 paper [3], Ohnishi found halogencontaining polymers were not following the trend in certain etch gases. From the literature, we can see that people had modified the Ohnishi parameter to fit their etch rates of fluorine-containing polymers in different ways. However, the modifications are more mathematical, and there is no theory that can explain the physical meaning. Here, we selected
3發表的論文，並基於我們的聚合物分解理論，分析他們的數據和結論。

結果 (繁體中文) 2:

含鹵素聚合物在光刻學中已有很長時間使用，例如，含氟聚合物已用於光刻。由於光刻使用較短的曝光光波長，芳烴結構由於其強大的吸光性，不能用作光刻膜中的等離子蝕刻面膜。含氟聚合物因其蝕刻電阻和透明性而得到開發。鹵化聚合物的蝕刻特性與僅包含 C、H 和 O 的聚合物不完全相同。在1983年的論文[3]中，Ohnishi發現含鹵素聚合物在某些蝕刻氣體中沒有遵循趨勢。從文獻中我們可以看到，人們以不同的方式修改了Ohnishi參數，以適應其含氟聚合物的蝕刻率。然而，修改更多的是數學，沒有理論可以解釋物理意義。在這裡，我們選擇了
發表論文三篇，並基於我們的聚合物分解理論分析了他們的資料和結論。

結果 (繁體中文) 3:

含鹵素聚合物在光刻中的應用由來已久，如含氟聚合物在光刻膠中的應用。由於使用較短的曝光光波長進行光刻，芳香族結構由於其强吸光度而不能用作光刻膠中的电浆蝕刻掩模。含氟聚合物由於其耐腐蝕性和透明性而得到了發展。鹵化聚合物的蝕刻特性與僅含C、H和O的聚合物不完全相同。Ohnishi在其1983年的論文[3]中發現，鹵化聚合物在某些蝕刻氣體中不符合趨勢。從文獻中可以看出，人們對Ohnishi參數進行了修正，以不同的管道擬合含氟聚合物的刻蝕速率。然而，這些修改更多的是數學上的，沒有任何理論能够解釋物理意義。在這裡，我們選擇了
根據我們的聚合物分解理論，發表了三篇論文並分析了它們的數據和結論。