In conclusion, it was noted that th

In conclusion, it was noted that the (111) orientation of the HZO film was inappropriate for o-phase formation due to the almost equivalent tensile strain along the a-, b-, and c- axis. Using highly (111)-textured Pt BE films, highly (111)- textured t-phase HZO films were deposited. Even though the HZO films on the Pt BE showed an almost equivalent ein value compared to those on the TiN BE, and a small enough average grain size to induce the t-phase (and subsequently, the o-phase, if the strain condition was appropriate), they did not show ferroelectricity at all. Based on the results, it was concluded that the origin of the formation of the unstable o-phase under the ALD and the annealing conditions in this experiment was the large tensile strain along the c-axis of the t-phase, which could have been induced by the coales- cence of the nucleating grains. This insight provides a way to further enhance the ferroelectric performance of the HfO2-based thin films if their grain size and crystallographic orientations could be further optimized.

結果 (繁體中文) 2:

最後，據指出，HZO薄膜的（111）方向不適合O相形成，因為沿a-、b-和c軸的拉力幾乎相等。使用高 （111）紋理 Pt BE 薄膜，高 （111）紋理 t 相 HZO 薄膜沉積。儘管 Pt BE 上的 HZO 薄膜與 TiN BE 上的薄膜相比，其 ein 值幾乎相等，並且足夠小的平均顆粒大小可以誘導 t 相（以及隨後的 o 相，如果應變條件合適），它們沒有顯示鐵電。根據研究結果，得出結論，在ALD下形成的不穩定O相和退火條件的起源是沿t相的C軸的大拉伸應變，這可能是由凝聚-c-核粒。如果能夠進一步優化基於 HfO2 的薄膜的顆粒尺寸和晶體方向，這種洞察力為進一步提高基於 HfO2 的薄膜的鐵電性能提供了一種方法。

結果 (繁體中文) 3:

總之，由於沿a、b和c軸的拉伸應變幾乎相等，HZO薄膜的（111）取向不適合於o相的形成。利用高（111）織構的Pt-BE薄膜，製備了高（111）織構的t相HZO薄膜。儘管Pt-BE上的HZO薄膜顯示出與TiN-BE上的幾乎相等的ein值，並且有足够小的平均晶粒尺寸來誘導t相（隨後，如果應變條件合適，則為o相），但它們根本沒有顯示鐵電性。結果表明，在ALD和退火條件下，不穩定o相的形成是由成核晶粒的聚煤作用引起的沿t相c軸方向的大應變引起的。這一發現為進一步優化HfO2基薄膜的晶粒尺寸和晶體學取向提供了途徑。